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IGI60L1414B1MXUMA1

IGI60L1414B1MXUMA1

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INFINEON

140 MΩ / 600 V GAN TRANSISTOR IN HALF-BRIDGE CONFIGURATION WITH INTEGRATED LEVEL-SHIFT GATE DRIVER AND BOOTSTRAP DIODE

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IGI60L1414B1MXUMA1

IGI60L1414B1MXUMA1

Active
INFINEON

140 MΩ / 600 V GAN TRANSISTOR IN HALF-BRIDGE CONFIGURATION WITH INTEGRATED LEVEL-SHIFT GATE DRIVER AND BOOTSTRAP DIODE

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Description

General part information

IGI60L1414B1MXUMA1

IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on)typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

Technical Specifications

Parameters and characteristics for this part

SpecificationIGI60L1414B1MXUMA1
ApplicationsGeneral Purpose, DC Motors
Current - Output / Channel6 A
Fault ProtectionUVLO
FeaturesBootstrap Circuit
Load TypeResistive, Capacitive
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Output ConfigurationHalf Bridge
Package / Case27-PowerTFLGA
Package NamePG-TFLGA-27-2
Rds On (Typ)140 mOhm
Rds On (Typ) HS140 mOhm
Rds On (Typ) LS140 mOhm
TechnologyNMOS
Voltage - Load (Max)600 V
Voltage - Supply (Maximum)20 V
Voltage - Supply (Minimum)10 VDC

Pricing

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