IRF8852TRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 25V 7.8A 8TSSOP

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Obsolete

Infineon Technologies

MOSFET 2N-CH 25V 7.8A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8852TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.8 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	11.3 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.35 V

Part	Technology	Mounting Type	Power - Max [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Package / Case [custom]	Package / Case [custom]	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF8852TRPBF	MOSFET (Metal Oxide)	Surface Mount	1 W	25 V	-55 °C	150 °C	8-TSSOP	9.5 nC	Logic Level Gate	2 N-Channel (Dual)	7.8 A	2.35 V	8-TSSOP	0.173 "	4.4 mm	11.3 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$