Specification	IRFD024PBF

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	640 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-HVMDIP, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1.3 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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