Description
General part information
IPP018N03LF2SAKSA1
Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features an RDS(on)of 1.8 mOhm in a TO-220 package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPP018N03LF2S achieves up to 40% RDS(on)improvement while having up to 60% FOM enhancement and excellent robustness
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP018N03LF2SAKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 35 A |
| Current - Continuous Drain (Id) (Tc) | 128 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 143 nC |
| Input Capacitance (Ciss) (Max) | 6400 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | PG-TO220-3-U05 |
| Power Dissipation (Max) | 167 W, 3.8 W |
| Rds On (Max) | 1.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.35 V |
Pricing
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