
G2003A
ActiveGoford Semiconductor
N190V, 3A,RD<540M@10V,VTH1.0V~3.

G2003A
ActiveGoford Semiconductor
N190V, 3A,RD<540M@10V,VTH1.0V~3.
Description
General part information
G2003A
N190V, 3A,RD<540M@10V,VTH1.0V~3.
Technical Specifications
Parameters and characteristics for this part
| Specification | G2003A |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 190 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 580 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 1.8 W |
| Rds On (Max) | 540 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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