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BY25FQ128ELSIG(T)

BY25FQ128ELSIG(T)

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BYTe Semiconductor

128 MBIT, 1.8V (1.65V TO 1.95V),

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BY25FQ128ELSIG(T)

BY25FQ128ELSIG(T)

Active
BYTe Semiconductor

128 MBIT, 1.8V (1.65V TO 1.95V),

Find alt

Description

General part information

BY25FQ128ELSIG(T)

128 MBIT, 1.8V (1.65V TO 1.95V),

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25FQ128ELSIG(T)
Access Time6 ns
Clock Frequency133 MHz
Memory Depth16 M
Memory FormatFLASH
Memory Interface (Type)QPI, SPI - Quad I/O
Memory Size128 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.209 in
Package Name8-SOIC, 8-SOP
Package Width5.3 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)2 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page2.5 ms
Write Cycle Time - Word120 µs

Pricing

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CAD

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Documents

Technical documentation and resources