Specification	SIJH5100E-T1-GE3

Current - Continuous Drain (Id) (Ta)	28 A
Current - Continuous Drain (Id) (Tc)	277 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	128 nC
Input Capacitance (Ciss) (Max)	6900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 8 x 8
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	333 W, 3.3 W
Rds On (Max)	1.89 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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