SF2008G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 20A TO220AB

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF2008G

Capacitance @ Vr, F	80 pF
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation SF2008G	1.7 V	80 pF	200 mA 500 ns	600 V	TO-220AB	TO-220-3	35 ns	5 µA	Standard	Through Hole	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 20A Through Hole TO-220AB

Technical documentation and resources