
XSM6K376NW,LXHF
ActiveToshiba Semiconductor and Storage
N-CH MOSFET, 30 V, 4.0 A, 0.056O

XSM6K376NW,LXHF
ActiveToshiba Semiconductor and Storage
N-CH MOSFET, 30 V, 4.0 A, 0.056O
Description
General part information
XSM6K376NW,LXHF
N-CH MOSFET, 30 V, 4.0 A, 0.056O
Technical Specifications
Parameters and characteristics for this part
| Specification | XSM6K376NW,LXHF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.2 nC |
| Input Capacitance (Ciss) (Max) | 200 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | DFN2020B |
| Power Dissipation (Max) | 1.51 W |
| Rds On (Max) | 56 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 12 V |
| Vgs(th) (Max) | 1 V |
Pricing
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