
G1003A
ActiveGoford Semiconductor
N100V,RD(MAX)<210M@10V,RD(MAX)<2

G1003A
ActiveGoford Semiconductor
N100V,RD(MAX)<210M@10V,RD(MAX)<2
Description
General part information
G1003A
N100V,RD(MAX)<210M@10V,RD(MAX)<2
Technical Specifications
Parameters and characteristics for this part
| Specification | G1003A |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC |
| Input Capacitance (Ciss) (Max) | 532 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 1.5 W, 5 W |
| Rds On (Max) | 210 mOhm, 120 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V, 3 V |
Pricing
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