Description
General part information
IPB019N08N5ATMA1
Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET IPB019N08N5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB019N08N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 180 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 123 nC |
| Input Capacitance (Ciss) (Max) | 8970 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | PG-TO263-7, TO-263-7, D2PAK |
| Power Dissipation (Max) | 224 W |
| Rds On (Max) | 1.95 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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