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Description

General part information

AOM020V120X2

1200V SILICON CARBIDE MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationAOM020V120X2
Current - Continuous Drain (Id) (Tc)89 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)166 nC
Input Capacitance (Ciss) (Max)5180 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4L
Power Dissipation (Max)348 W
Rds On (Max)28 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-8 V
Vgs (Max) Positive18 V
Vgs(th) (Max)2.8 V

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