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LA SI14IP2

LA SI14IP2

Active
Light-Avenue

INFRARED BARE CHIP, 1450 NM, 3 M

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LA SI14IP2

LA SI14IP2

Active
Light-Avenue

INFRARED BARE CHIP, 1450 NM, 3 M

Find alt

Description

General part information

LA SI14IP2

INFRARED BARE CHIP, 1450 NM, 3 M

Technical Specifications

Parameters and characteristics for this part

SpecificationLA SI14IP2
Current - DC Forward (If) (Max)70 mA
Operating Temperature (Max)85 °C
Operating Temperature (Min)-20 °C
Package / CaseDie
Radiant Intensity (Ie) Min3 mW/sr
TypeInfrared (IR)
Voltage - Forward (Vf) (Typ)1.03 V
Wavelength1450 nm

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