Description
General part information
ISG0616N10NM5HSCATMA1
Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on)of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISG0616N10NM5HSCATMA1 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Ta) | 19 A |
| Current - Continuous Drain (Id) (Tc) | 139 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Max) | 78 nC |
| Input Capacitance (Ciss) (Max) | 4800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 10-PowerWDFN |
| Package Name | PG-WHITFN-10-1 |
| Power - Max (Ta) | 3 W |
| Power - Max (Tc) | 167 W |
| Rds On (Max) | 4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3.8 V |
Pricing
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