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S29GL01GS11DHIV20

S29GL01GS11DHIV20

Active
INFINEON

NOR FLASH PARALLEL 3V/3.3V 1G-BIT 64M X 16 110NS 64-PIN FORTIFIED BGA TRAY

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S29GL01GS11DHIV20

S29GL01GS11DHIV20

Active
INFINEON

NOR FLASH PARALLEL 3V/3.3V 1G-BIT 64M X 16 110NS 64-PIN FORTIFIED BGA TRAY

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Description

General part information

S29GL01GS11DHIV20

S29GL01GS11DHIV20 is a S29GL01GS MIRRORBIT™ page-mode flash memory IC is fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Technical Specifications

Parameters and characteristics for this part

SpecificationS29GL01GS11DHIV20
Access Time110 ns
Memory Depth64 M
Memory FormatFLASH
Memory Interface (Type)Parallel
Memory Size1 Gbit
Memory TypeNon-Volatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case64-LBGA
Package Length9 mm
Package Name64-FBGA
Package Width9 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page60 ns
Write Cycle Time - Word60 ns

Pricing

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CAD

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Documents

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