Description
General part information
IQD016N08NM5ATMA1
The power MOSFET IQD016N08NM5 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on)of 1,6 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQD016N08NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 31 A |
| Current - Continuous Drain (Id) (Tc) | 323 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 133 nC |
| Input Capacitance (Ciss) (Max) | 9200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSON-8-9 |
| Power Dissipation (Max) | 3 W, 333 W |
| Rds On (Max) | 1.57 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources