Specification	GS61008TMRXUSA1

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Max)	12 nC, 12 nC
Input Capacitance (Ciss) (Max)	590 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-SMD, No Lead
Rds On (Max)	9.5 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	7 V
Vgs(th) (Max)	1.3 V

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