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INFINEON IPT008N06NM5LFATMA1

IPT008N06NM5LFATMA1

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INFINEON

IPT008N06NM5LF IS INFINEON’S NEW BEST-IN-CLASS OPTIMOS™ 5 LINEAR FET 80V IN A TO-LEADLESS PACKAGE, OFFERING THE INDUSTRY’S LOWEST ON-STATE RESISTANCE RDS(ON).

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INFINEON IPT008N06NM5LFATMA1

IPT008N06NM5LFATMA1

Active
INFINEON

IPT008N06NM5LF IS INFINEON’S NEW BEST-IN-CLASS OPTIMOS™ 5 LINEAR FET 80V IN A TO-LEADLESS PACKAGE, OFFERING THE INDUSTRY’S LOWEST ON-STATE RESISTANCE RDS(ON).

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Description

General part information

IPT008N06NM5LFATMA1

IPT008N06NM5LF is Infineon’s best-in-classOptiMOS™ 5 linear FET 60Vin aTO-Leadless (TOLL) package, offering the industry’s lowest on-state resistance RDS(on)and wide safe operating area (SOA) at 25˚C. The OptiMOS™ linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT008N06NM5LF is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, andprotectionapplications commonly found intelecomandbattery management systems (BMS).

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT008N06NM5LFATMA1
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)185 nC
Input Capacitance (Ciss) (Max)980 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN
Package NamePG-HSOF-8
Power Dissipation (Max)278 W
Rds On (Max)0.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.6 V

Pricing

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CAD

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