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Description

General part information

MCP100N10Y-TP

MOSFET N-CH 100V 100A TO220AB

Technical Specifications

Parameters and characteristics for this part

SpecificationMCP100N10Y-TP
Current - Continuous Drain (Id)100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)122 nC, 122 nC
Input Capacitance (Ciss) (Max)6897 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220AB (H)
Power Dissipation (Max)147 W
Rds On (Max)3.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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