Specification	DMTH10H4M5LPSW

Current - Continuous Drain (Id) (Ta)	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	4843 pF, 4843 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PowerDI5060-8 (Type UX)
Power Dissipation (Max)	4.7 W, 136 W
Rds On (Max)	4.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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