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Description

General part information

CA3250F

Bipolar (BJT) Transistor Array 8 NPN 16V 100mA 750mW Through Hole 18-CERDIP

Technical Specifications

Parameters and characteristics for this part

SpecificationCA3250F
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)40
Mounting TypeThrough Hole
NPN Count8
Operating Temperature (Max)125 °C
Operating Temperature (Min)-55 °C
Package Length0.3 in
Package Name18-CDIP, 18-CerDIP
Package Width7.62 mm
Power - Max750 mW
Transistor TypeNPN
Vce Saturation (Max)800 mV
Voltage - Collector Emitter Breakdown (Max)16 V

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