1002
ObsoleteGoford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
1002
ObsoleteGoford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
Description
General part information
1002
N100V,RD(MAX)<250M@10V,RD(MAX)<2
Technical Specifications
Parameters and characteristics for this part
| Specification | 1002 |
|---|---|
| Current - Continuous Drain (Id) | 2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10 nC |
| Input Capacitance (Ciss) (Max) | 387 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) | 250 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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