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GT700P08D3

GT700P08D3

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Goford Semiconductor

MOSFET P-CH 80V 16A 69W 75M(MAX)

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GT700P08D3

GT700P08D3

Active
Goford Semiconductor

MOSFET P-CH 80V 16A 69W 75M(MAX)

Find alt

Description

General part information

GT700P08D3

MOSFET P-CH 80V 16A 69W 75M(MAX)

Technical Specifications

Parameters and characteristics for this part

SpecificationGT700P08D3
Current - Continuous Drain (Id) (Tc)16 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)75 nC
Input Capacitance (Ciss) (Max)1591 pF, 1591 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package Length3.15 mm
Package Name8-DFN
Package Width3.05 mm
Power Dissipation (Max)69 W
Rds On (Max)75 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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