Description
General part information
IPD052N10NF2SATMA1
Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on)and over 50 percent Qgimprovement.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD052N10NF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 17 A |
| Current - Continuous Drain (Id) (Tc) | 118 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 76 nC, 76 nC |
| Input Capacitance (Ciss) (Max) | 3600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Power Dissipation (Max) | 150 W, 3 W |
| Rds On (Max) | 5.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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