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PSMQE096N10LS2_R2_00601

PSMQE096N10LS2_R2_00601

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Panjit International Inc.

EXCELLENT FOM / 100V/9.6M / DFN3

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PSMQE096N10LS2_R2_00601

PSMQE096N10LS2_R2_00601

Active
Panjit International Inc.

EXCELLENT FOM / 100V/9.6M / DFN3

Find alt

Description

General part information

PSMQE096N10LS2_R2_00601

EXCELLENT FOM / 100V/9.6M / DFN3

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMQE096N10LS2_R2_00601
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)32.2 nC
Input Capacitance (Ciss) (Max)2080 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

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CAD

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