
RFW2N06RLE
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

RFW2N06RLE
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
RFW2N06RLE
N-Channel 60 V 2A (Tc) 1.09W (Tc) Through Hole 4-DIP, Hexdip
Technical Specifications
Parameters and characteristics for this part
| Specification | RFW2N06RLE |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 2 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 30 nC |
| Input Capacitance (Ciss) (Max) | 535 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.3 in |
| Package Name | Hexdip, 4-DIP |
| Package Width | 7.62 mm |
| Power Dissipation (Max) | 1.09 W |
| Rds On (Max) | 200 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 10 V |
| Vgs(th) (Max) | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available