S3DB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AA

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	S3DB

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Technology
Taiwan Semiconductor Corporation S3DB	Surface Mount	200 V	150 °C	-55 °C	SMB	DO-214AA	DO-214AA SMB	10 µA	1.15 V	Standard Recovery >500ns	200 mA	1500 ns	3 A	40 pF	Standard
Taiwan Semiconductor Corporation S3D	Surface Mount	200 V	150 °C	-55 °C		DO-214AB (SMC)	DO-214AB SMC	10 µA		Standard Recovery >500ns	200 mA	1500 ns	3 A	60 pF	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources