HER304GA-G

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Comchip Technology

DIODE GEN PURP 300V 3A DO27

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Comchip Technology

DIODE GEN PURP 300V 3A DO27

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General part information

Diode 300 V 3A Through Hole DO-27

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Specification	HER304GA-G	HER304 Series

Current - Average Rectified (Io)	3 A	3 A
Current - Reverse Leakage @ Vr	5 µA	5 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	150 °C	150 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	Axial, DO-27, DO-201AA	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	50 ns	50 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	DO-27	DO-27
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V	300 V
Voltage - Forward (Vf) (Max) @ If	1 V	1 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
Comchip Technology HER304GT-G	50 ns	300 V	Standard	200 mA, 500 ns	1 V	DO-27	Through Hole	5 µA	Axial, DO-201AA, DO-27	150 °C	-55 °C	3 A
Comchip Technology HER304GA-G	50 ns	300 V	Standard	200 mA, 500 ns	1 V	DO-27	Through Hole	5 µA	Axial, DO-201AA, DO-27	150 °C	-55 °C	3 A