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Description

General part information

FDW258P

MOSFET P-CH 12V 9A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

SpecificationFDW258P
Current - Continuous Drain (Id) (Ta)9 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)73 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.173 in
Package Name8-TSSOP
Package Width4.4 mm
Power Dissipation (Max)1.3 W
Rds On (Max)11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1.5 V

Pricing

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CAD

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