MMZ09332BT1
ObsoleteHIGH EFFICIENCY/LINEARITY AMPLIFIER, 130 MHZ TO 1 GHZ, 30.5 DB GAIN, 3 V TO 5 V, HVQFN-12, 175 °C
MMZ09332BT1
ObsoleteHIGH EFFICIENCY/LINEARITY AMPLIFIER, 130 MHZ TO 1 GHZ, 30.5 DB GAIN, 3 V TO 5 V, HVQFN-12, 175 °C
Description
General part information
MMZ09332BT1
MMZ09332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23dBm covering frequencies from 130 to 1000MHz. It operates from a supply voltage of 3 to 5V. The amplifier requires minimal external matching and offers state of the art reliability, ruggedness, temperature stability and ESD performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | MMZ09332BT1 |
|---|---|
| Current - Supply | 240 mA |
| Frequency (Max) | 1 GHz |
| Frequency (Min) | 130 MHz |
| Gain | 31 dB |
| Mounting Type | Surface Mount |
| P1dB | 32 dBm |
| Package / Case | 12-VFQFN Exposed Pad |
| Package Length | 3 mm |
| Package Name | 12-QFN |
| Package Width | 3 mm |
| RF Type | W-CDMA, TDS-CDMA, LTE |
| Test Frequency | 1 GHz |
| Voltage - Supply | 5 VDC |
Pricing
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