Description
General part information
IMDQ75R027M1HXUMA1
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMDQ75R027M1HXUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 64 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 49 nC |
| Input Capacitance (Ciss) (Max) | 1668 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22-1 |
| Power Dissipation (Max) | 273 W |
| Rds On (Max) | 25 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -2 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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