1SS226,LF

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMINI

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	1SS226,LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	1 Pair Series Connection
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	S-Mini
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

DIODE ARRAY GP 80V 100MA SMINI

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Technology	Mounting Type	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package
Toshiba Semiconductor and Storage 1SS226,LF	500 nA	125 °C	Standard	Surface Mount	1 Pair Series Connection	100 mA	4 ns	Any Speed	200 mA	80 V	SC-59, SOT-23-3, TO-236-3	S-Mini

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General part information

Diode Array 1 Pair Series Connection 80 V 100mA Surface Mount TO-236-3, SC-59, SOT-23-3

Technical documentation and resources