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GP3D030A120B

GP3D030A120B

Active
SemiQ

DIODE SIL CARB 1200V 30A TO2472

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GP3D030A120B

GP3D030A120B

Active
SemiQ

DIODE SIL CARB 1200V 30A TO2472

Find alt

Description

General part information

GP3D030A120B

DIODE SIL CARB 1200V 30A TO2472

Technical Specifications

Parameters and characteristics for this part

SpecificationGP3D030A120B
Capacitance1762 pF
Current - Average Rectified (Io)30 A
Current - Reverse Leakage60 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

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CAD

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Documents

Technical documentation and resources