
RCD075N20TL
LTBRohm Semiconductor
MOSFET N-CH 200V 7.5A CPT3

RCD075N20TL
LTBRohm Semiconductor
MOSFET N-CH 200V 7.5A CPT3
Description
General part information
RCD075N20TL
MOSFET N-CH 200V 7.5A CPT3
Technical Specifications
Parameters and characteristics for this part
| Specification | RCD075N20TL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 7.5 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 15 nC |
| Input Capacitance (Ciss) (Max) | 755 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | CPT3 |
| Power Dissipation (Max) | 20 W, 850 mW |
| Rds On (Max) | 325 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5.25 V |
Pricing
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