Description
General part information
IQD009N06NM5CGSCATMA1
The power MOSFET IQD009N06NM5CGSC comes with a low RDS(on)of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQD009N06NM5CGSCATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 42 A |
| Current - Continuous Drain (Id) (Tc) | 445 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 150 nC |
| Input Capacitance (Ciss) (Max) | 12000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 9-PowerWDFN |
| Package Name | PG-WHTFN-9-U02 |
| Power Dissipation (Max) | 3 W, 333 W |
| Rds On (Max) | 0.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.3 V |
Pricing
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