BY25D40ESSIG(T)
ActiveBYTe Semiconductor
4 MBIT, 3.0V (2.7V TO 3.6V), -40
BY25D40ESSIG(T)
ActiveBYTe Semiconductor
4 MBIT, 3.0V (2.7V TO 3.6V), -40
Description
General part information
BY25D40ESSIG(T)
4 MBIT, 3.0V (2.7V TO 3.6V), -40
Technical Specifications
Parameters and characteristics for this part
| Specification | BY25D40ESSIG(T) |
|---|---|
| Access Time | 7 ns |
| Clock Frequency | 120 MHz |
| Memory Depth | 512 K |
| Memory Format | FLASH |
| Memory Interface (Type) | SPI - Dual I/O |
| Memory Size | 4 Mbit |
| Memory Type | Non-Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.209 in |
| Package Name | 8-SOP, 8-SOIC |
| Package Width | 5.3 mm |
| Technology | FLASH - NOR |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.7 V |
| Write Cycle Time - Page | 3.6 ms |
| Write Cycle Time - Word | 3.6 ms |
Pricing
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CAD
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Documents
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