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H11N2M

H11N2M

Obsolete
ON Semiconductor

OPTOISO 4.17KV OPN COLL 6-DIP

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H11N2M

H11N2M

Obsolete
ON Semiconductor

OPTOISO 4.17KV OPN COLL 6-DIP

Find alt

Description

General part information

H11N2M

OPTOISO 4.17KV OPN COLL 6-DIP

Technical Specifications

Parameters and characteristics for this part

SpecificationH11N2M
Current - DC Forward (If) (Max)30 mA
Current - Output / Channel50 mA
Data Rate5 MBd
Fall Time (Typ)12 ns
Input TypeDC
Inputs - Side 11
Inputs - Side 20
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Output TypeOpen Collector
Package Length0.3 in
Package Name6-DIP
Package Width7.62 mm
Propagation Delay tpHL (Max)330 ns
Propagation Delay tpLH (Max)330 ns
Rise Time (Typ)7.5 ns
Voltage - Forward (Vf) (Typ)1.4 V
Voltage - Isolation4170 Vrms
Voltage - Supply (Maximum)15 V
Voltage - Supply (Minimum)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources