G200P04S2

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Goford Semiconductor

MOSFET 2P-CH 40V 9A 8SOP

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Goford Semiconductor

MOSFET 2P-CH 40V 9A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G200P04S2

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.1 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

MOSFET 2P-CH 40V 9A 8SOP

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Mounting Type	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]
Goford Semiconductor G200P04S2	40 V	9 A	2.5 V	2365 pF	8-SOP	MOSFET (Metal Oxide)	Surface Mount	2.1 W	2 P-Channel	42 nC	-55 °C	150 °C	20 mOhm	8-SOIC	3.9 mm	0.154 in

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General part information

Mosfet Array 40V 9A (Tc) 2.1W (Tc) Surface Mount 8-SOP

Technical documentation and resources