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IAUCN08S7L013ATMA1
Single FETs, MOSFETs

IAUCN08S7L013ATMA1

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INFINEON

MOSFET_(75V 120V(

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IAUCN08S7L013ATMA1
Single FETs, MOSFETs

IAUCN08S7L013ATMA1

Active
INFINEON

MOSFET_(75V 120V(

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Description

General part information

IAUCN08S7L013ATMA1

MOSFET_(75V 120V(

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUCN08S7L013ATMA1
Current - Continuous Drain (Id) (Tj)293 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)156 nC, 156 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-53
Power Dissipation (Max)219 W
QualificationAEC-Q101
Rds On (Max)1.26 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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