
RSD131P10TL
LTBRohm Semiconductor
MOSFET P-CH 100V 13A CPT3

RSD131P10TL
LTBRohm Semiconductor
MOSFET P-CH 100V 13A CPT3
Description
General part information
RSD131P10TL
MOSFET P-CH 100V 13A CPT3
Technical Specifications
Parameters and characteristics for this part
| Specification | RSD131P10TL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 13 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 40 nC |
| Input Capacitance (Ciss) (Max) | 2400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | CPT3 |
| Power Dissipation (Max) | 20 W, 850 mW |
| Rds On (Max) | 200 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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