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GT100N12D5

GT100N12D5

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Goford Semiconductor

MOSFET,N-CH,120V,70A,100W,DFN5*6

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GT100N12D5

GT100N12D5

Active
Goford Semiconductor

MOSFET,N-CH,120V,70A,100W,DFN5*6

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Description

General part information

GT100N12D5

MOSFET,N-CH,120V,70A,100W,DFN5*6

Technical Specifications

Parameters and characteristics for this part

SpecificationGT100N12D5
Current - Continuous Drain (Id)70 A
Current - Continuous Drain (Id) (Tc)70 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)50 nC, 45 nC
Input Capacitance (Ciss) (Max)2990 pF, 3050 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseFlat Leads, 8-PowerSMD, 8-PowerVDFN
Package Length5 mm
Package Name8-DFN
Package Width6 mm
Power Dissipation (Max)120 W, 100 W
Rds On (Max)10 mOhm, 10 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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