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SICRD5650

SICRD5650

Active
SMC Diode Solutions

DIODE SIL CARBIDE 650V 5A DPAK

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SICRD5650

SICRD5650

Active
SMC Diode Solutions

DIODE SIL CARBIDE 650V 5A DPAK

Find alt

Description

General part information

SICRD5650

DIODE SIL CARBIDE 650V 5A DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSICRD5650
Current - Average Rectified (Io)5 A
Current - Reverse Leakage60 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

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CAD

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Documents

Technical documentation and resources