
SICRD5650
ActiveSMC Diode Solutions
DIODE SIL CARBIDE 650V 5A DPAK

SICRD5650
ActiveSMC Diode Solutions
DIODE SIL CARBIDE 650V 5A DPAK
Description
General part information
SICRD5650
DIODE SIL CARBIDE 650V 5A DPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | SICRD5650 |
|---|---|
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage | 60 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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CAD
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Documents
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