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Description

General part information

NP60N03KUG-E1-AY

MOSFET N-CH 30V 60A TO263

Technical Specifications

Parameters and characteristics for this part

SpecificationNP60N03KUG-E1-AY
Current - Continuous Drain (Id) (Tc)60 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)93 nC
Input Capacitance (Ciss) (Max)5300 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263
Power Dissipation (Max)1.8 W, 88 W
Rds On (Max)4.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

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