IRFB3256PBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 3.4 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 3.4 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3256PBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	3.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type
Infineon Technologies IRFB3256PBF	195 nC	300 W	3.4 mOhm	4 V	75 A	20 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220AB	10 V	6600 pF	TO-220-3	60 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Technical documentation and resources