SUP28N15-52-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 28A TO220AB

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 28A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP28N15-52-E3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1725 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	120 W, 3.75 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type
Vishay General Semiconductor - Diodes Division SUP28N15-52-E3	TO-220-3	28 A	-55 °C	175 ░C	3.75 W 120 W	6 V 10 V	N-Channel	MOSFET (Metal Oxide)	1725 pF	40 nC	TO-220AB	52 mOhm	20 V	4.5 V	150 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 28A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB

Technical documentation and resources