RSFGL

Taiwan Semiconductor Corporation

DIODE GP 400V 500MA SUB SMA

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Taiwan Semiconductor Corporation

DIODE GP 400V 500MA SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	RSFGL

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed
Taiwan Semiconductor Corporation RSFGL	1.3 V	Standard	DO-219AB	Surface Mount	400 V	150 ns	Sub SMA	500 mA	4 pF	5 µA	150 °C	-55 °C	200 mA 500 ns

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General part information

Diode 400 V 500mA Surface Mount Sub SMA

Technical documentation and resources