Description
General part information
GS0650182LTRXUMA1
The GS-065-018-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-018-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or server and data center applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | GS0650182LTRXUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 4 nC |
| Input Capacitance (Ciss) (Max) | 132 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 8-PDFN |
| Package Width | 8 mm |
| Rds On (Max) | 110 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 7 V |
| Vgs(th) (Max) | 2.6 V |
Pricing
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CAD
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Documents
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