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Description

General part information

MCAC100N10YHE3-TP

MOSFET N-CH 100 100A DFN5060

Technical Specifications

Parameters and characteristics for this part

SpecificationMCAC100N10YHE3-TP
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)55 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4700 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NameDFN5060
Power Dissipation (Max)113 W
QualificationAEC-Q101
Rds On (Max)5.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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