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ISZ143N13NM6ATMA1

ISZ143N13NM6ATMA1

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INFINEON

OPTIMOS™ 6 POWER MOSFET 135 V NORMAL LEVEL IN PQFN 3.3X3.3 PACKAGE

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ISZ143N13NM6ATMA1

ISZ143N13NM6ATMA1

Active
INFINEON

OPTIMOS™ 6 POWER MOSFET 135 V NORMAL LEVEL IN PQFN 3.3X3.3 PACKAGE

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Description

General part information

ISZ143N13NM6ATMA1

OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72-84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on)and cost, helping improve the system efficiency.

Technical Specifications

Parameters and characteristics for this part

SpecificationISZ143N13NM6ATMA1
Current - Continuous Drain (Id) (Ta)8.7 A
Current - Continuous Drain (Id) (Tc)54 A
Drain to Source Voltage (Vdss)135 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)27 nC
Input Capacitance (Ciss) (Max)1800 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSDSON-8-36
Power Dissipation (Max)95 W, 2.5 W
Rds On (Max)13.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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