Description
General part information
IMYH200R100M1HXKSA1
The CoolSiC™ 2000 V 100 mΩSiC MOSFETin TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses ofCoolSiC™ technologyprovide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMYH200R100M1HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 26 A |
| Drain to Source Voltage (Vdss) | 2000 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 55 nC |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | PG-TO247-4-U04 |
| Power Dissipation (Max) | 217 W |
| Rds On (Max) | 131 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 5.5 V |
Pricing
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